View BFE505_1219140.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BFE505 NPN wideband differential transistor
Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08
Philips Semiconductors
Product specification
NPN wideband differential transistor
FEATURES * Small size * High power gain at low bias current and voltage * Temperature matched * Balanced configuration * hFE matched * Continues to operate at VCE < 1 V. APPLICATIONS * Single balanced mixers * Balanced amplifiers * Balanced oscillators. DESCRIPTION Emitter coupled dual NPN silicon RF transistor in a surface mount, 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. - - - - - 60 - - TYP.
4 Top view 5 e
handbook, halfpage
BFE505
PINNING - SOT353B SYMBOL b1 e b2 c2 c1 PIN 1 2 3 4 5 base 1 emitter base 2 collector 2 collector 1 DESCRIPTION
3
2
1 c1 b1 c2 b2
MAM211
Fig.1 Simplified outline and symbol.
MAX.
UNIT
Any single transistor Cre MSG/Gmax F feedback capacitance CBC maximum power gain noise figure Ie = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3 V; f = 900 MHz IC = 5 mA; VCE = 3 V; f = 2 GHz IC = 2 mA; VCE = 3 V; f = 900 MHz; S = opt IC = 3 mA; VCE = 3 V; f = 2 GHz; S = opt hFE Rth j-s DC current gain thermal resistance from junction to soldering point IC = 5 mA; VCE = 3 V single loaded double loaded 0.25 17 10 1.2 1.9 120 - - 0.3 - - 1.7 2.1 250 230 115 K/W K/W pF dB dB dB dB
1996 Oct 08
2
Philips Semiconductors
Product specification
NPN wideband differential transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. - - - - up to Ts = 118 C; note 1 - -65 -
BFE505
MAX.
UNIT
Any single transistor VCBO VCEO VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature operating junction temperature open emitter open base open collector 20 8 2.5 18 500 +175 175 V V V mA mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 single loaded double loaded CONDITIONS VALUE 230 115 UNIT K/W K/W
Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
3
Philips Semiconductors
Product specification
NPN wideband differential transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 A; IE = 0 IE = 2.5 A; IC = 0 IE = 0; VCB = 6 V IC = 5 mA; VCE = 6 V IC1 = IC2 = 5 mA; VCE1 = VCE2 = 6 V IE1 = IE2 = 10 mA; Tamb = 25 C MIN. TYP. - - - - 120
BFE505
MAX. - - - 50 250 - -
UNIT
DC characteristics of any single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE hFE VBEO collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain 20 8 2.5 - 60 V V V nA collector-emitter breakdown voltage IC = 10 A; IB = 0
DC characteristics of the dual transistor ratio of highest and lowest DC current gain difference between highest and lowest base-emitter voltage (offset voltage) 1 0 1.2 1
mV
AC characteristics of any single transistor fT Cc Cre MSG/Gmax transition frequency collector capacitance feedback capacitance maximum power gain; note 1 IC = 5 mA; VCE = 3 V; f = 1 GHz IE = ie = 0; VCB = 3 V; f = 1 MHz IC = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 3 V; f = 2 GHz; Tamb = 25 C s 21 F
2
- - - - - - - -
9 0.3 0.25 17 10 13 1.2 1.9
- - - - - - 1.7 2.1
GHz pF pF dB dB dB dB dB
insertion power gain noise figure
IC = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 C IC = 2 mA; VCE = 3 V; f = 900 MHz; S = opt IC = 3 mA; VCE = 3 V; f = 2 GHz; S = opt
Note 1. Maximum gain of the differential amplifier is higher because of internal emitter connection (see Fig.2).
1996 Oct 08
4
Philips Semiconductors
Product specification
NPN wideband differential transistor
APPLICATION INFORMATION SPICE parameters for any single BFE505 die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 5 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 134.1 180.0 0.988 38.34 150.0 27.81 2.051 55.19 0.982 2.459 2.920 17.45 1.062 20.00 1.000 20.00 1.171 4.350 0.000 1.110 3.000 284.7 600.0 0.303 7.037 12.34 1.701 30.64 0.000 242.4 188.6 0.041 0.130 1.332 0.000 750.0 0.000 0.897 UNIT aA - - V mA fA - - - V mA aA - A - eV - fF mV - ps - V mA deg fF mV - - ns F mV - -
LP LP
handbook, halfpage
BFE505
C1
C2
B1
LB
T1
T2
LB
B2
LE
LE
LP
MBG190
E
Fig.2
Package equivalent circuit SOT353B (inductance only).
Lead inductances (nH)
LP LB LE
0.4 0.8 0.6
E
35 3.5 2 36
B1
B2
35 35 35
E
C2
36 2
B2
C1
15
MBG191
C2
Fig.3
Package capacitance (fF) between indicated nodes.
Philips Semiconductors
Product specification
NPN wideband differential transistor
Typical application circuit
BFE505
handbook, full pagewidth
+VCC
IF out
RF in
LO in
+VCC
MBG192
Fig.4 Single balanced switching mixer amplifier, featuring high LORF isolation and linearity.
1996 Oct 08
6
Philips Semiconductors
Product specification
NPN wideband differential transistor
PACKAGE OUTLINE
BFE505
handbook, full pagewidth
0.2 1.0 0.8 0.8 0.6 0.1 0.0 0.3 0.1 A 1.35 1.15 0.2 M B B 0.17 0.10
0.65
1
5 0.25 0.15 (5x) 2.2 1.8
0.65
2
3
MSA365
4 2.2 2.0 0.2 M A
Dimensions in mm.
Fig.5 SOT353.
1996 Oct 08
7
Philips Semiconductors
Product specification
NPN wideband differential transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFE505
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 08
8

▲Up To Search▲

Price & Availability of BFE505

	To Download BFE505 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .